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DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use.
4.0 MIN.
PACKAGE DIMENSIONS
(Unit : mm)
1
0.50.05 0.1-0.03
+0.06
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
4.0 MIN. 2
4.0 MIN. 4
3 0.50.05 2.550.2 2.1
1.8 MAX. 0.55
1. 2. 3. 4.
Emitter Collector Emitter Base
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200 C, but the ambient or storage temperature is limitted to 150 C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice. Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan
4.0 MIN.
45
(c)
1981
2SC2148, 2SC2149
2SC2148
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
500 400 300 200 100 0
PT-Total Power Dissipation-mW
with infinite heat sink; Rth(j-c) 130 C/W mounting on ceramic boad with solder (Al2O3 20 x 50 x 0.635 mm) ; Rth(j-a) 190 C/W
free-air; Rth(j-a) 610 C/W
50
100
150
200
48 TA-Ambient Temperature-C
2SC2149
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT-Total Power Dissipation-mW
600
with infinite heat sink; Rth(j-c) 120 C/W
400
mounting on ceramic boad with solder (Al2O3 20 x 50 x 0.635 mm) ; Rth(j-a) 180 C/W free-air; Rth(j-a) 600 C/W
200
0
50
100 110
140 150
200
TA-Ambient Temperature-C
2
2SC2148, 2SC2149
2SC2148 ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT(TA = 48 C) PT(Tc = 150 C) Tj Tstg 30 14 3.0 50 250 250 200 -65 to +150 V V V mA mW mW C C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance * Insertion Gain Noise Figure Maximum Available Gain SYMBOL ICBO IEBO hFE fT Cob S21e NF MAG
2
MIN.
TYP.
MAX. 0.1 0.1
UNIT
TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 10 mA
A A
30
80 3.0 0.55
200 GHz pF dB 3.5 dB dB
VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 10 mA, f = 1.0 GHz VCE = 10 V, IC = 3.0 mA, f = 500 MHz VCE = 10 V, IC = 10 mA, f = 1.0 GHz
7.5
9.3 2.1 13.3
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 C)
DC CURRENT GAIN vs. COLLECTOR CURRENT
50
200
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V
VCE = 10 V
hFE-DC Current Gain
100
IC-Collector Current-mA
1 5 10 50
10 5
50
20
1 10 0.5 0.5 0.5
0.6
0.7
0.8
0.9
IC-Collector Current-mA
VBE-Base to Emitter Voltage-V
3
2SC2148, 2SC2149
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
7 15
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz
fT-Gain Bandwidth Product-GHz
5 3
VCE = 10 V
S21e2-Insertion Gain-dB
1 5 10 50
10
1
0.5 0.3
5
0.1 0.5
0 0.5
1
5
10
50
IC-Collector Current-mA
IC-Collector Current-mA
COLLECTOR AND EMITTER CAPACITANCE vs. REVERSE VOLTAGE
3 7
NOISE FIGURE vs. COLLECTOR CURRENT VCE = 10 V f = 500 MHz
Cob-Collector Capacitance-pF Cib-Emitter Capacitance-pF
f = 1.0 MHz
2 6
NF-Noise Figure-dB
5 4 3 2 1
untuned (50 ) tuned
1
Cob Cib
0.5
0.3 0 0.5 1 2 5 10 20 30
0 0.5
1
5
10
50
VCB-Collector to Base Voltage-V VEB-Emitter to Base Voltage-V
IC-Collector Current-mA
4
2SC2148, 2SC2149
2SC2149 ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT(TA = 25 C) PT(Tc = 140 C) Tj Tstg 25 12 3.0 70 290 500 200 -65 to +150 V V V mA mW mW C C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance * Insertion Gain SYMBOL ICBO IEBO hFE fT Cob S21e2 30 70 5.0 0.6 12.7 5.0 6.7 1.7 Noise Figure NF 2.6 17 Maximum Available Gain MAG 11 4.0 MIN. TYP. MAX. 0.1 0.1 200 GHz pF dB dB dB dB dB dB VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 5.0 mA VCE = 10 V, IC = 20 mA UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz
A A
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 C)
DC CURRENT GAIN vs. COLLECTOR CURRENT
200 70
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
50 VCE = 10 V
VCE = 10 V
IC-Collector Current-mA
1 5 10 50 70
100
hFE-DC Current Gain
20 10 5
50
2 1
20
10 0.5
0.5 0.5
0.6
0.7
0.8
0.9
IC-Collector Current-mA
VBE-Base to Emitter Voltage-V
5
2SC2148, 2SC2149
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
7 15
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz S21e2-Insertion Gain-dB
fT-Gain Bandwidth Product-GHz
5
VCE = 10 V
2 1
10
0.5
5
0.2 0.1 0.5
1
5
10
50 70
0 0.5
1
5
10
50 70
IC-Collector Current-mA
IC-Collector Current-mA
COLLECTOR AND EMITTER CAPACITANCE vs. REVERSE VOLTAGE
2 7
NOISE FIGURE vs. COLLECTOR CURRENT VCE = 10 V f = 1.85 GHz
Cob-Collector Capacitance-pF Cib-Emitter Capacitance-pF
f = 1.0 MHz
6
NF-Noise Figure-dB
2 5 10 20 30
Cob
1
5 4 3 2 1
Cib
0.5
0.3 0 0.5 1
0 0.5
1
5
10
50 70
VCB-Collector to Base Voltage-V VEB-Emitter to Base Voltage-V
IC-Collector Current-mA
6
2SC2148, 2SC2149
[MEMO]
7
2SC2148, 2SC2149
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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